PART |
Description |
Maker |
LHF16KA1 LH28F160S3NS-L10 |
Flash Memory 16M (2MB 8/1MB 16) 闪存16M内存MB的/1MB6 Flash Memory 16M (2MB bb 8/1MB bb 16) Flash Memory 16M (2MB × 8/1MB × 16)
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Sharp, Corp. Sharp Electrionic Components
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LH28F160S3T-L10 LH28F160S3T-L10A LHF16KA6 |
Flash Memory 16M (2MB x 8/1MB x 16) Flash Memory 16M (2MB bb 8/1MB bb 16) Flash Memory 16M (2MB 8/1MB 16) Flash Memory 16M (2MB 】 8/1MB 】 16)
|
SHARP[Sharp Electrionic Components]
|
LH28F160S5NS-L70 LHF16KA4 |
Flash Memory 16M (2MB 】 8/1MB 】 16) Flash Memory 16M (2MB 8/1MB 16)
|
SHARP[Sharp Electrionic Components]
|
LH28F160S5T-L70 LH28F160S5T-L70A LHF16KA9 |
Flash Memory 16M (2MB 】 8/1MB 】 16) Flash Memory 16M (2MB 8/1MB 16)
|
SHARP[Sharp Electrionic Components]
|
MB84VA2100 MB84VA2101-10 MB84VA2101 MB84VA2100-10 |
MCP (Multi-Chip Package) FLASH MEMORY & SRAM 16M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM (MB84VA2100 / MB84VA2101) 16M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM
|
Fujitsu Microelectronics FUJITSU[Fujitsu Media Devices Limited]
|
CAT28F020_04 CAT28F020 CAT28F020G-12T CAT28F020G-9 |
256K X 8 FLASH 12V PROM, 90 ns, PQCC32 2 Megabit CMOS Flash Memory Bulk Erase Flash Memory, 2Mb
|
http:// CATALYST[Catalyst Semiconductor]
|
K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位,8米16位NAND闪存 16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
N25Q128A13BF840E N25Q128A23BF840E N25Q128A33BF840E |
16M X 8 FLASH 3V PROM, PDSO16 16M X 8 FLASH 3V PROM, PBGA24 128-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase on boot sectors,XiP enabled, serial flash memory with 108 MHz SPI bus interface
|
Numonyx B.V
|
E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器(J3 Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56 Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56 Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64 (TE28FxxxJ3C) Strata Flash Memory Strata Flash Memory / 256 Mbit
|
Intel, Corp. Intel Corp. http:// Intel Corporation
|
M58CR032C100ZB6T M58CR032C120ZB6T M58CR032C85ZB6T |
32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory 32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory 32 Mbit 2Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory From old datasheet system
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STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
ID243D01 ID242D01 |
2MB Flash Memory Card
|
SHARP[Sharp Electrionic Components]
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